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FJP2145 ? esbc? rated npn power transistor ? 2013 fairchild semiconductor corporation www.fairchildsemi.com FJP2145 rev. 1.0.0 1 april 2013 FJP2145 esbc ? rated npn power transistor esbc features (fdc655 mosfet) ? low equivalent on resistance ? very fast switch: 150 khz ? wide rbsoa: up to 1100 v ? avalanche rated ? low driving capacitance, no miller capacitance ? low switching losses ? reliable hv switch: no false triggering due to high dv/dt transients applications ? high-voltage, high-speed power switch ? emitter-switched bipolar/mosfet cascode (esbc ? ) ? smart meters, smart breakers, smps, hv industrial power supplies ? motor drivers and ignition drivers ordering information notes: 1. figure of merit. 2. other fairchild mosfets can be used in this esbc application. v cs(on) i c equiv. r cs(on) (1) 0.21 v 2 a 0.105 part number marking package packing method FJP2145tu j2145 to-220 tube 1 2 3 b c e figure 2. internal schematic diagram c b g s fdc655 FJP2145 figure 3. esbc configuration (2) figure 1. pin configuration 1.base 2.collector 3.emitter 1 to-220 description the FJP2145 is a low-cost, high-performance power switch designed to provide the best performance when used in an esbc ? configuration in applications such as: power supplies, motor drivers, smart grid, or ignition switches. the power switch is designed to operate up to 1100 volts and up to 5 amps, while providing exception- ally low on-resistance and very low switching losses. the esbc ? switch can be driven using off-the-shelf power supply controllers or drivers. the esbc ? mos- fet is a low-voltage, low-cost, surface-mount device that combines low-input capacitance and fast switching. the esbc ? configuration further minimizes the required driv- ing power because it does not have miller capacitance. the FJP2145 provides exceptional reliability and a large operating range due to its square reverse-bias-safe-oper- ating-area (rbsoa) and rugged design. the device is avalanche rated and has no parasitic transistors, so is not prone to static dv/dt failures. the power switch is manufa ctured using a dedicated high-voltage bipolar process and is packaged in a high- voltage to-220 package.
FJP2145 ? esbc? rated npn power transistor ? 2013 fairchild semiconductor corporation www.fairchildsemi.com FJP2145 rev. 1.0.0 2 absolute maximum ratings (3) stresses exceeding the absolute maximu m ratings may damage the device. the de vice may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. in addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. the absolute maximum ratings are stress ratings only. values are at t a = 25c unless otherwise noted. notes: 3. pulse test is pulse width 5 ms, duty cycle 10%. 4. lab characterization data only for reference. thermal characteristics values are at t a = 25c unless otherwise noted. electrical characteristics (5) values are at t a = 25c unless otherwise noted. note: 5. pulse test is pulse width 5 ms, duty cycle 10%. symbol parameter value units v cbo collector-base voltage 1100 v v ceo collector-emitter voltage 800 v v ebo emitter-base voltage 7 v i c collector current 5 a i b base current 1.5 a p c collector dissipation (t c = 25c) 120 w t j operating and junction tem perature range -55 to +125 c t stg storage temperature range -55 to +150 c ear (4) avalanche energy (t j = 25 c, 1.2 mh) 15 mj symbol parameter max. units r jc thermal resistance, junction to case 1.04 c/w r ja thermal resistance, junction to ambient 78.72 c/w symbol parameter test cond ition min. typ. max. units bv cbo collector-base breakdown voltage i c = 1 ma, i e = 0 1100 v bv ceo collector-emitter breakdown volt- age i c = 5 ma, i b = 0 800 v bv ebo emitter-base breakdown voltage i e = 1 ma, i c = 0 7 v i cbo collector cut-off current v cb = 800 v, i e = 0 10 a i ebo emitter cut-off current v eb = 5 v, i c = 0 10 a h fe1 dc current gain v ce = 5 v, i c = 0.2 a 20 40 h fe2 v ce = 5 v, i c = 1 a 8 v ce (sat) collector-emitter saturation voltage i c = 0.25 a, i b = 0.05 a 0.049 v i c = 0.5 a, i b = 0.167 a 0.052 v i c = 1 a, i b = 0.33 a 0.082 v i c = 1.5 a, i b = 0.3 a 0.151 2.000 v v be (sat) base-emitter saturation voltage i c = 500 ma, i b = 50 ma 0.752 v i c = 1.5 a, i b = 0.3 a 0.833 1.500 v i c = 2 a, i b = 0.4 a 0.855 v c ib input capacitance v eb = 5 v, i c = 0, f = 1 mhz 1.618 pf c ob output capacitance v cb = 200 v, i e = 0, f = 1 mhz 11.39 pf f t current gain bandwidth product v ce = 10 v, i c = 0.2 a 15 mhz
FJP2145 ? esbc? rated npn power transistor ? 2013 fairchild semiconductor corporation www.fairchildsemi.com FJP2145 rev. 1.0.0 3 esbc-configured electr ical characteristics (6) values are at t a = 25c unless otherwise noted. note: 6. a typical fdc655 mosfet was used for the specificati ons above. values could vary if other fairchild mosfets are used. symbol parameter test cond ition min. typ. max. units f t current gain bandwidth product i c = 0.1 a,v ce = 10 v 28.40 mhz it f inductive current fall time v cc = 100 v, v gs = 10 v, r g = 4 7 , v clamp = 500 v, i c = 0.5 a, i b = 0.05 a, h fe = 10, l c = 166 h, srf = 684 khz 95 ns t s inductive storage time 0.13 ns vt f inductive voltage fall time 135 ns vt r inductive voltage rise time 80 ns t c inductive crossover time 115 ns it f inductive current fall time v cc = 100 v, v gs = 10 v, r g = 47 , v clamp = 500 v, i c = 1 a, i b = 0.2 a, h fe = 5, l c = 166 h, srf = 684 khz 50 ns t s inductive storage time 0.34 ns vt f inductive voltage fall time 150 ns vt r inductive voltage rise time 60 ns t c inductive crossover time 95 ns v csw maximum collector-source voltage at turn-off without snubber h fe = 5, i c = 2 a 1100 v i gs(os) gate-source leakage current v gs = 20 v 1na v cs(on) collector-source on volt- age v gs = 10 v, i c = 2 a, i b = 0.67 a, h fe = 3 0.202 v v gs = 10 v, i c = 1 a, i b = 0.33 a, h fe = 3 0.111 v v gs = 10 v, i c = 0.5 a, i b = 0.17 a, h fe = 3 0.067 v v gs = 10 v, i c = 0.3 a, i b = 0.06 a, h fe = 5 0.060 v v gs(th) gate threshold voltage v bs = v gs, i b = 250 a 1.9 v c iss input capacitance (v gs = v cb = 0) v cs = 25 v, f = 1 mhz 470 pf q gs(tot) gate-source change v cb = 0 v gs = 10 v, i c = 6.3 a, v cs = 25 v 9nc r ds(on) static drain-to-source on resistance v gs = 10 v, i d = 6.3 a 21 m v gs = 4.5 v, i d = 5.5 a 26 m v gs = 10 v, i d = 6.3 a, t j = 125c 30 m
FJP2145 ? esbc? rated npn power transistor ? 2013 fairchild semiconductor corporation www.fairchildsemi.com FJP2145 rev. 1.0.0 4 typical performan ce characteristics figure 4. static characteristics figure 5. dc current gain figure 6. collector-emi tter saturation voltage h fe = 3 figure 7. collector-emi tter saturation voltage h fe = 5 figure 8. collector-emi tter saturation voltage h fe = 10 figure 9. collector-emi tter saturation voltage h fe = 20 01234567 0 1 2 3 4 5 0.1 a 0.2 a 0.3 a 0.4 a 0.5 a 0.6 a 0.7 a 0.8 a 0.9 a i b = 1 a i c [a], collector current v ce [v], collector-emitter voltage 1e-3 0.01 0.1 1 10 1 10 100 1 25 o c 25 o c -25 o c -40 o c h fe , dc current gain i c [a], collector current v ce = 5 v 1e-3 0.01 0.1 1 10 0.01 0.1 1 10 - 40 o c - 25 o c 25 o c hfe = 3 125 o c v ce (sat) [v], saturation voltage i c [a], collector current 1e-3 0.01 0.1 1 10 0.01 0.1 1 10 -40 o c -25 o c 25 o c 125 o c hfe = 5 v ce (sat) [v], saturation voltage i c [a], collector current 1e-3 0.01 0.1 1 10 0.01 0.1 1 10 -40 o c -25 o c 25 o c 125 o c hfe = 10 v ce (sat) [v], saturation voltage i c [a], collector current 1e-3 0.01 0.1 1 10 0.01 0.1 1 10 25 o c 125 o c hfe = 20 v ce (sat) [v], saturation voltage i c [a], collector current
FJP2145 ? esbc? rated npn power transistor ? 2013 fairchild semiconductor corporation www.fairchildsemi.com FJP2145 rev. 1.0.0 5 typical performan ce characteristics (continued) figure 10. typical collector saturation voltage figure 11. capacitance figure 12. inductive load collector current fall - time (t f ) figure 13. inductive load collector current storage - time (t stg ) figure 14. inductive load collector voltage fall - time (t f ) figure 15. inductive load collector voltage rise - time (t r ) 0.01 0.1 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 i c = 0.4 a i c = 1 a i c = 2 a i c = 3 a v ce [v], voltage i b [ma], base current 1 10 100 1000 1 10 100 1000 collector-base capacitance, c cb [pf] collector-base voltage[v] 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 25 50 75 100 125 150 tf hfe = 5 common emitter tf hfe = 10 common emitter tf hfe = 5 esbc tf hfe = 10 esbc time [ns] i c [a], collector current h fe =5, 10, t j = 25 o c, l=166 uh, srf=684 khz 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 h fe = 5, 10, t j = 25 o c, l=166 uh srf = 684 khz, 2i b 1=i b 2, no peaking tf hfe = 5 common emitter tf hfe = 10 common emitter tf hfe = 5 esbc tf hfe = 10 esbc time [us] i c [a], collector current 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 120 140 160 180 tf hfe = 5 common emitter tf hfe = 10 common emitter tf hfe = 5 esbc tf hfe = 10 esbc time [ns] i c [a], collector current h fe =5, 10, t j = 25 o c, l=166 uh, srf=684 khz 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 50 100 150 200 250 300 350 400 450 500 tf hfe = 5 common emitter tf hfe = 10 common emitter tf hfe = 5 esbc tf hfe = 10 esbc time [ns] i c [a], collector current h fe =5, 10, t j = 25 o c, l=166 uh, srf=684 khz
FJP2145 ? esbc? rated npn power transistor ? 2013 fairchild semiconductor corporation www.fairchildsemi.com FJP2145 rev. 1.0.0 6 typical performan ce characteristics (continued) figure 16. inductive load collector current / voltage crossover (t c ) figure 17. bjt rbsoa figure 18. esbc rbsoa figure 19. crossover fbsoa figure 20. power derating 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 50 100 150 200 250 300 350 400 450 500 550 600 tf hfe = 5 common emitter tf hfe = 10 common emitter tf hfe = 5 esbc tf hfe = 10 esbc time [ns] i c [a], collector current h fe =5, 10, t j = 25 o c, l=166 uh, srf=684 khz 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1 2 3 4 5 6 7 v dd = +/- 50 v, r load = open, h fe =4 i c [a], collector current v ce [v], collector-emitter voltage 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 0 1 2 3 4 5 6 7 v dd = +/-50 v, r load = open, h fe = 4 i c [a], collector current v ce [v], collector-emitter voltage 0 500 1000 1500 2000 0.1 1 10 t c = 25 o c single 80 s pulse i c [a], collector current v ce [v], collector-emitter voltage 0 25 50 75 100 125 150 175 0 30 60 90 120 150 p c [w], power dissipation t c [ o c], case temperature
FJP2145 ? esbc? rated npn power transistor ? 2013 fairchild semiconductor corporation www.fairchildsemi.com FJP2145 rev. 1.0.0 7 test circuits a }?? st???? p j r\g} k|{ a }?? st???? p j k|{ }?? a p i figure 21. test circuit for inductive load and reverse bias safe operating figure 22. energy rating test circuit figure 23. ft measurement figure 24. fbsoa
FJP2145 ? esbc? rated npn power transistor ? 2013 fairchild semiconductor corporation www.fairchildsemi.com FJP2145 rev. 1.0.0 8 test circuits (continued) functional test waveforms figure 25. simplified satura ted switch driver circuit figure 26. crossover time measurement figure 27. saturated switching waveform 90% vce 10% vce 90% ic 10% ic t off
FJP2145 ? esbc? rated npn power transistor ? 2013 fairchild semiconductor corporation www.fairchildsemi.com FJP2145 rev. 1.0.0 9 functional test waveforms (continued) figure 28. storage time - common emitter base turn off (ib2) to i c fall - time figure 29. storage time - esbc fet gate (off) to i c fall - time
FJP2145 ? esbc? rated npn power transistor ? 2013 fairchild semiconductor corporation www.fairchildsemi.com FJP2145 rev. 1.0.0 10 very wide input voltage range supply driving esbc switches xy [ z \ ] _ o} }?? v|{ jz mi kl{ z y x x y oxxhnx}t tiyywx\wj{{| xwww?m z\} xwww?m z\} x y z[ \ ^ ` yy}? yl ttzkzw^w xu[x[_~z xw?m xww?m y\} xy}? mqhmzx\xwh{| mkj]\\ tw?x]w_i[^xh w]rl[[wh |m[ww^ xu[x[_ xyw?m [\w} xyw?m [\w} xyw?m [\w} y^wr y^wr y^wr y^wr y^wr y^wr x????gy???????gxywro? zw~???? ywwtxwww}gkj xuwhg????? xytx[}???? [}???? y[}gxuy\h q qgt???g?????g??g???????? 1 FJP2145 fdc655 2.5a limit 24v@3.3a 30watts 100k 100k 100k 100k 100k 100k 100k 680 f 680 f 680 f figure 30. 30 w; secondary-side regulation: 3 capacitor input; quasi resonant fairchild proprietary figure 31. v cc derived figure 32. v bias supply derived figure 33. proportional drive
FJP2145 ? esbc? rated npn power transistor ? 2013 fairchild semiconductor corporation www.fairchildsemi.com FJP2145 rev. 1.0.0 11 physical dimensions figure 34. to-220, molded, 3-lead, jedec varidation ab package drawings are provided as a servic e to customers considering fairchild co mponents. drawings may change in any manner without notice. please note the revision and/or date on the drawi ng and contact a fairchild semi conductor representative to ver ify or obtain the most recent revision. package specifications do not ex pand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers fairchild products. always visit fairchild semiconduct or?s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/ . for current tape and reel specifications, visit fairchild semiconductor?s online packaging area: http://www.fairchildsemi.com/dwg/to/to220b03.pdf.
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